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| SPICE MODEL: DMN5L06DWK DMN5L06DWK Lead-free Green DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features * * * * * * * * * * * Dual N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 2) ESD Protected Up To 2kV "Green" Device (Note 4) Qualified to AEC-Q101 Standards for High Reliability J D F L K S2 G2 SOT-363 Dim A D2 Min 0.10 1.15 2.00 0.30 1.80 3/4 0.90 0.25 0.10 0 Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8 A S1 G1 B BC C D F H J M 0.65 Nominal D1 G H K L M a Mechanical Data * * * * * * * * Case: SOT-363 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals Connections: See Diagram Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking: See Page 2 Ordering & Date Code Information: See Page 2 Weight: 0.006 grams (approximate) All Dimensions in mm D2 G1 S1 ESD protected up to 2kV S2 G2 D1 Maximum Ratings Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) @ TA = 25C unless otherwise specified Characteristic Symbol VDSS VGSS Continuous Pulsed (Note 3) ID Pd RqJA Tj, TSTG Value 50 20 305 800 200 625 -65 to +150 Units V V mA mW C/W C Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Note: 1. Device mounted on FR-4 PCB. 2. No purposefully added lead. 3. Pulse width 10mS, Duty Cycle 1%. 4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DS30930 Rev. 2 - 2 1 of 5 www.diodes.com DMN5L06DWK a Diodes Incorporated NEW PRODUCT Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance Source-Drain Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: @ TA = 25C unless otherwise specified Symbol BVDSS @ TC = 25C IDSS IGSS Min 50 3/4 3/4 Typ 3/4 3/4 3/4 Max 3/4 60 1 500 50 1.2 3.0 2.5 2.0 3/4 3/4 1.4 50 25 5.0 Unit V nA A nA nA V W A mS V pF pF pF VDS = 25V, VGS = 0V f = 1.0MHz Test Condition VGS = 0V, ID = 10mA VDS = 50V, VGS = 0V VGS = 12V, VDS = 0V VGS = 10V, VDS = 0V VGS = 5V, VDS = 0V VDS = VGS, ID = 250mA VGS = 1.8V, ID = 50mA VGS = 2.5V, ID = 50mA VGS = 5.0V, ID = 50mA VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA VGS(th) RDS (ON) ID(ON) |Yfs| VSD Ciss Coss Crss 0.49 3/4 3/4 3/4 0.5 200 0.5 3/4 3/4 3/4 3/4 3/4 3/4 3/4 1.4 3/4 3/4 3/4 3/4 3/4 5. Short duration test pulse used to minimize self-heating effect. 1.5 VGS = 10V 8V 6V 5V 4V 3V 8V 10V 5V 4V 3V 1 VDS = 10V Pulsed 1.2 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 6V 0.9 TA = 150 C 0.1 TA = 125 C TA = 85 C TA = 25 C 0.6 0.3 TA = -25 C TA = -55 C 0 0 1 2 3 4 5 0.01 0 1 2 3 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics DS30930 Rev. 2 - 2 2 of 5 www.diodes.com DMN5L06DWK 1.0 10 VDS = 10V ID = 1mA Pulsed NEW PRODUCT VGS(th), GATE THRESHOLD VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 -55 -25 0 25 50 75 VGS = 10V Pulsed TA = 125 C TA = 150 C TA = 85 C 1 TA = 25 C TA = -25 C TA = -55 C 100 125 150 0.1 0.001 0.01 0.1 1 Tch, CHANNEL TEMPERATURE (C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current 2.0 10 VGS = 5V Pulsed TA = 125 C TA = 150 C TA = 85 C 1.8 1.6 1.4 1.2 TA = 25 C Pulsed ID = 280mA ID = 140mA 1 TA = 25 C TA = -25 C TA = -55 C 1.0 0.8 0.6 0.4 0.2 0.1 0.001 0.01 0.1 1 0 0 2 4 6 8 10 12 14 16 18 20 ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current 3 VGS = 10V Pulsed VGS, GATE SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage 1 VGS = 0V Pulsed IDR, REVERSE DRAIN CURRENT (A) TA = 150 C 2 ID = 280mA ID = 140mA 0.1 TA = 125 C TA = 85 C 1 0.01 TA = 25 C TA = -25 C TA = -55 C 0 -50 -25 0 25 50 75 100 125 150 Tch, CHANNEL TEMPERATURE ( C) Fig. 7 Static Drain-Source On-State Resistance vs. Channel Temperature 0.001 0 0.5 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Reverse Drain Current vs. Source-Drain Voltage 1 DS30930 Rev. 2 - 2 3 of 5 www.diodes.com DMN5L06DWK |Yfs|, FORWARD TRANSFER ADMITTANCE (S) 1 1 VDS = 10V Pulsed TA = -55 C TA = -25 C TA = 25 C NEW PRODUCT IDR, REVERSE DRAIN CURRENT (A) VGS = 10V 0.1 0.1 TA = 85 C TA = 125 C TA = 150 C 0.01 VGS = 0V TA = 25C Pulsed 0.001 0 0.2 0.4 0.6 0.8 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 9 Reverse Drain Current vs. Source-Drain Voltage 0.01 0.001 0.01 0.1 1 ID, DRAIN CURRENT (A) Fig.10 Forward Transfer Admittance vs. Drain Current 250 Pd, POWER DISSIPATION (mW) 200 150 100 50 O ROJA = 625 C/W 0 -50 0 50 100 150 TA, AMBIENT TEMPERATURE ( C) Fig. 11 Derating Curve - Total Ordering Information Device DMN5L06DWK-7 Notes: (Note 6) Packaging SOT-363 Shipping 3000/Tape & Reel 6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. DS30930 Rev. 2 - 2 4 of 5 www.diodes.com DMN5L06DWK NEW PRODUCT Marking Information D2 G1 S1 DAB YM S2 G2 D1 DAB = Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September Date Code Key Year Code Month Code Jan 1 Feb 2 2006 T Mar 3 Apr 4 May 5 2007 U Jun 6 Jul 7 2008 V Aug 8 Sep 9 Oct O 2009 W Nov N Dec D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30930 Rev. 2 - 2 5 of 5 www.diodes.com DMN5L06DWK |
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